magnetoelectronic - Synonyms of magnetoelectronic | Antonyms of magnetoelectronic | Definition of magnetoelectronic | Example of magnetoelectronic | Word Synonyms API

Top 10 similar words or synonyms for magnetoelectronic

spintronic 0.742484

spintronics 0.694883

pmtj 0.684709

nanoelectronic 0.609585

sttm 0.601257

magnetoelectronics 0.580455

magnetoresitive 0.567839

multiferroic 0.567733

micromagnetic 0.557269

magenetooptic 0.555551

Article	Example
Spin wave	When magnetoelectronic devices are operated at high frequencies, the generation of spin waves can be an important energy loss mechanism. Spin wave generation limits the linewidths and therefore the quality factors Q of ferrite components used in microwave devices. The reciprocal of the lowest frequency of the characteristic spin waves of a magnetic material gives a time scale for the switching of a device based on that material.
Multiferroics	In multiferroic thin films, the coupled magnetic and ferroelectric order parameters can be exploited for developing magnetoelectronic devices. These include novel spintronic devices such as tunnel magnetoresistance (TMR) sensors and spin valves with electric field tunable functions. A typical TMR device consists of two layers of ferromagnetic materials separated by a thin tunnel barrier (~2 nm) made of a multiferroic thin film. In such a device, spin transport across the barrier can be electrically tuned. In another configuration, a multiferroic layer can be used as the exchange bias pinning layer. If the antiferromagnetic spin orientations in the multiferroic pinning layer can be electrically tuned, then magnetoresistance of the device can be controlled by the applied electric field. One can also explore multiple state memory elements, where data are stored both in the electric and the magnetic polarizations.

Article

Example

Spin wave

When magnetoelectronic devices are operated at high frequencies, the generation of spin waves can be an important energy loss mechanism. Spin wave generation limits the linewidths and therefore the quality factors Q of ferrite components used in microwave devices. The reciprocal of the lowest frequency of the characteristic spin waves of a magnetic material gives a time scale for the switching of a device based on that material.

Multiferroics

In multiferroic thin films, the coupled magnetic and ferroelectric order parameters can be exploited for developing magnetoelectronic devices. These include novel spintronic devices such as tunnel magnetoresistance (TMR) sensors and spin valves with electric field tunable functions. A typical TMR device consists of two layers of ferromagnetic materials separated by a thin tunnel barrier (~2 nm) made of a multiferroic thin film. In such a device, spin transport across the barrier can be electrically tuned. In another configuration, a multiferroic layer can be used as the exchange bias pinning layer. If the antiferromagnetic spin orientations in the multiferroic pinning layer can be electrically tuned, then magnetoresistance of the device can be controlled by the applied electric field. One can also explore multiple state memory elements, where data are stored both in the electric and the magnetic polarizations.